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UM6000 / UM6200/UM6600
POWER PIN DIODES
DESCRIPTION These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6200 is useful in applications where forward bias current must be minimized. Because of its thick I-region width and long lifetime the UM6000 and UM6600 have been used in distortion sensitive and high peak power applications, including receiver protectors, TACN, and IFF equipment. Their low capacitance allows them to be useful as attenuator diodes at frequencies greater than 1 GHz. The UM6200 has been used successfully in switches in which low insertion loss at low bias current is required. The "A" style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave applications using coaxial, microstrip, and stripline techniques at frequencies beyond XBand. The "B" and "E" style leaded packages offer the highest available power dissipation for a package this small. They have been used extensively as series switch elements in microstrip circuits. The "C" style package duplicates the physical outline available in conventional ceramic-metal packages but incorporates the many reliability advantages of the Microsemi construction.
KEY FEATURES
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Voltage ratings to 1000V Average power dissipation to 6 W Series resistance as low as 0.4 Carrier lifetime greater than 1.0 s Non cavity design Thermally matched configuration Low capacitance at 0 V bias Low conductance at 0 V bias Compatible with automatic insertion equipment
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED)
Package Condition UM6000/UM6600 PD A & C 25 OC Pin Temperature 6W 25 OC/W PD UM6200
APPLICATIONS/BENEFITS Isolated stud package available Surface mount package available RoHS compliant packaging available: use UMX6001B, etc.
4 W 37.5 oC/W 2.0 W 75 oC/W 0.5 W 3.0 W 42.5 oC/W 10 kW
B & E 1/2 in. total length to 25 OC Contact 2.5 W 60 OC/W Free Air 0.5 W SM 25 OC End Cap Temperature 4.5 W 27.5OC/W All 1 us pulse (Single) UM6000 25 kW UM6600 13 kW
UM6000/UM62000/UM6600 UM6000/UM62000/UM6600
VOLTAGE RATINGS
Reverse Voltage @ 10 uA 100 200 400 800 1000 UM6001 UM6002 UM6006 UM6010 UM6201 UM6202 UM6204 UM6601 UM6602 UM6606 UM6610
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
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Parameter
Reverse Current (Max) Series Resistance(Max) Capacitance (Max) Parallel Resistance(Min) Carrier Lifetime(Min) I-Region Width (Min)
Symbol
IR RS CT Rp
Conditions
At rated voltage If = 100 mA, F= 100 MHz VR = 100 V, F = 1 MHZ VR = 100 V, F = 100 MHz IF = 10 mA -
UM6600
10 2.5 0.4 300k 1.0 150
UM6000
10 1.7 0.5 300k 1.0 150
UM6200
10 0.4 1.1 350k 0.6 40
Units
uA Ohms pF Ohms us um
W
Style "B"
Style "SM"
UM6000/UM6200/UM6600
Rs versus If f = 100 MHz
105
104
103
Rs (Ohms)
UM6600 102 UM6000 101 UM6200
ELECTRICALS ELECTRICALS
100
10-1 10-6 10-5 10-4 10-3 10-2 10-1 100
If (A)
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .Microsemi .C OM
UM6000/UM6200/UM6600
FORWARD VOLTAGE versus CURRENT
100
FORWARD CURRENT (A)
10-1 UM6200
10-2 UM6000 UM6600 10 -3
10-4
10-5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE
UM6000/UM6600
Rp versus Vr
103 f = 100 MHz
Rp (kOhms)
102
f = 500 MHz
ELECTRICALS ELECTRICALS
f = 1 GHz f = 3 GHz
101
100 100 101 102 103
Vr (Volts)
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .Microsemi .C OM
UM6200
Rp versus Vr
10 3 f = 100 MHz
Rp (kOhms)
102
f = 500 MHz
f = 1 GHz 10 1
f = 3 GHz 100 100 101 102 103
Vr (Volts)
UM6000
Ct versus Vr
1.5
f = 1 MHz
1.0
Ct (pF)
f = 5 MHz
ELECTRICALS ELECTRICALS
f = 10 MHz
0.5 f => 100 MHz
0.0 1 10 100 250
Vr (Volts)
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
WWW .Microsemi .C OM
Ct versus Vr
1.4
1.3 f = 1 MHz
1.2
Ct (pF)
f = 10 MHz 1.1 f = 100 MHz 1.0 f = 500 MHz 0.9
0.8 1 10 100
Vr (Volts)
UM6600
Ct versus Vr
0.8
0.7
0.6
f = 1 MHz
Ct (pF)
0.5
f = 5 MHz 0.4
ELECTRICALS ELECTRICALS
f = 10 MHz 0.3 f = 100 MHz 0.2 1 10 100
Vr (Volts)
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200
WWW .Microsemi .C OM
MAX POWER DISSIPATION versus LEAD TEMPERATURE
5.0
MAX POWER DISSIPATION (W)
4.0
L = 1/4"
3.0
L = 3/8" L = 1/2" L = 5/8" L = 3/4"
2.0
1.0
0.0 0 25 50 75 100
T LEAD TEMPERATURE ( C) L
125 o
150
175
UM6600
MAX POWER DISSIPATION versus LEAD TEMPERATURE
5.0
MAX POWER DISSIPATION (W)
4.0 L = 1/4" 3.0 L = 3/8" L = 1/2" 2.0
ELECTRICALS ELECTRICALS
L = 5/8" L = 3/4" 1.0
0.0 0 25 50 75 100
TL LEAD TEMPERATURE ( C)
125 o
150
175
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
WWW .Microsemi .C OM
AVERGE POWER DISSIPATION versus TEMPERATURE
7.0
AVERGE POWER DISSIPATION (W)
6.0
UM6000 AND UM6200 SERIES
5.0
4.0
3.0 UM6600 2.0
1.0
0.0 -50 -25 0 25
TEMPERATURE ( C) (OFONE METAL PIN)
50 o
75
100
125
150
175
UM6000/UM6200/UM6600
PULSE THERMAL IMPEDANCE VS PULSE WIDTH
102
o
PULSE THERMAL IMPEDANCE ( C/W)
101
UM6200 100 UM6000 ------UM6600 10-1
ELECTRICALS ELECTRICALS
10-2 10-6 10-5 10-4 10-3 10-2 10-1 100
PULSE WIDTH (SEC)
Copyright 2005 Rev. 0, 2006-03-13
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UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .Microsemi .C OM
STYLE "A"
STYLE "B"
STYLE "C"
STYLE "E"
STYLE "D"
MECHANICAL MECHANICAL
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .Microsemi .C OM
UM6000/UM6200/UM6600
UM6000/UM6200/UM6600 STYLE "SM" FOOTPRINT
MECHANICAL MECHANICAL
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
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UM6000 / UM6200/UM6600
POWER PIN DIODES
NOTES: 1. These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at least as wide as the terminals themselves, assuming accuracy of placement within 0.005" 2. If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located.
NOTES:
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NOTES NOTES
Copyright 2005 Rev. 0, 2006-03-13
Microsemi
Page 10

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